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Electrical Characteristics
Values are at T A = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
BV DSS
Drain-Source Breakdown Voltage V GS = 0 V, I D = 10 μ A
50
V
BV DSS
T J
I DSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
I D = 250 μ A , Referenced to 25 ° C
V DS = 50 V, V GS = 0 V
0.11
0.1
V/ ° C
μ A
V GS = ±12 V, V DS = 0 V
± 1
I GSS
Gate-Body Leakage
V GS = ±10 V, V DS = 0 V
± 0.5
μ A
On Characteristics
V GS = ±5 V, V DS = 0 V
± 0.05
V GS(th)
V GS(th)
T J
R DS(ON)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
I D = 1 mA, Referenced to 25 ° C
V GS = 1.8V, I D = 50 mA,
V GS = 2.5 V, I D = 50 mA
0.6
-1.4
1.2
2.5
2.0
V
mV/ ° C
Ω
V GS = 5V, I D = 50 mA
1.6
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10 V, V DS = 5 V
V DS = 10 V, I D = 200 mA
0.2
200
A
mS
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DS = 5 V, V GS = 10 mV
58
9.75
5.2
281
pF
Ω
Switching Characteristics
t D(ON)
Turn-On Delay Time
5
t r
t D(OFF)
t f
Q g
Q gs
Q gd
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Change
Gate-Source Change
Gate-Drain Change
V DD = 30 V, I D = 0.29 A,
V GS = 10 V, R GEN = 6 Ω
V DS = 25 V, I D = 0.2 A,
V GS = 10 V, I G = 0.1 mA
5
60
35
2.4
0.5
0.5
ns
nC
Drain-Source Diode Characteristics and Maximum Ratings
V sd
Drain-Source Diode
Forward Voltage
V GS = 0 V, I S = 115 mA
1.2
V
? 2010 Fairchild Semiconductor Corporation
BSS138K Rev. 1.3.0
2
www.fairchildsemi.com
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